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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type 2SA1329 High speed switching time : tstg=1.0|I s(Typ.) Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A 2SC3346 APPLICATIONS For high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 80 80 6 12 2 UNIT V V V A A W ae ae Open emitter Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature Open collector TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ; IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=80V ;IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 70 40 80 MIN 80 0.2 0.9 TYP. 2SC3346 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V 0.4 1.2 10 10 240 |I |I V V A A Switching times Ton tstg tf Fall time Turn-on time Storage time INC Y E SEM ANG H OND IC TOR UC 220 0.2 1.0 0.2 MHz pF |I |I |I s s s IB1=-IB2=0.3A; RL=5| ,VCC=30V Pw=20|I s ;DutyU 1% hFE-1 classifications O 70-140 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3346 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3346 CHA IN E SEM NG OND IC TOR UC 4 |
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